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Ceramic End Effector

  • Caj Npab Hlau Ua Los Ntawm Alumina Uas Muaj Peev Xwm Siab Rau Kev Ua Tes Haujlwm Wafer

    Caj Npab Hlau Ua Los Ntawm Alumina Uas Muaj Peev Xwm Siab Rau Kev Ua Tes Haujlwm Wafer

    St.Cera lub caj npab neeg hlau alumina ceramic yog tsim los ntawm 99.8% siab-purity Al₂O₃ (alumina). Nws muaj lub zog flexural zoo heev (361 MPa), siab hardness (16 GPa), thiab qis density (3.93 g/cm³), ua rau lub caj npab sib dua tab sis khov kho rau kev hloov pauv semiconductor wafer. Cov khoom siv thermal expansion coefficient (7.2 × 10⁻⁶/°C) phim silicon ze, txo qhov thermal mismatch thaum lub sijhawm ua.

  • Bernoulli Ceramic End Effector - Kev Tswj Xyuas Wafer Tsis Sib Chwv Rau Cov Wafer Nyias & Fragile

    Bernoulli Ceramic End Effector - Kev Tswj Xyuas Wafer Tsis Sib Chwv Rau Cov Wafer Nyias & Fragile

    St.Cera's Bernoulli ceramic end effector siv aerodynamic lift los tuav cov wafers yam tsis muaj kev sib cuag. Ua los ntawm cov khoom siv siab-purity 99.8% alumina (Al₂O₃) lossis silicon carbide (SiC), nws muaj cov nozzles precision-machined uas tso cov roj siab los tsim ib daim nyias nyias ntawm qhov kawg effector thiab wafer. Lub hauv paus ntsiab lus tsis sib cuag no tshem tawm cov pa phem sab nraub qaum, ntug chipping, thiab kev puas tsuaj ntawm qhov chaw, ua rau nws zoo tagnrho rau cov wafers nyias (≤100 μm), tawg yooj yim, lossis warped. Lub ceramic substrate muab lub zog flexural siab (361 MPa rau Al₂O₃; txog li 550–600 MPa rau SiC), qhov hnyav tsawg, thiab qhov ruaj khov zoo heev, ua kom ntseeg tau tias rov ua dua qhov chaw hauv cov neeg hlau hloov wafer ceev ceev.

  • Teflon Coated Ceramic End Effector - Qhov Chaw Tsis Nplaum Rau Kev Tuav Wafer Rhiab

    Teflon Coated Ceramic End Effector - Qhov Chaw Tsis Nplaum Rau Kev Tuav Wafer Rhiab

    St.Cera's Teflon (PTFE) coated ceramic end effector sib xyaw ua ke lub zog siab alumina substrate nrog lub zog sib xws, qis-friction PTFE txheej (tuab 15–30 μm). Lub txheej muab cov coefficient qis heev ntawm kev sib txhuam (≤0.1), zoo heev tshuaj lom neeg tsis kam, thiab cov khoom tsis lo, tiv thaiv wafer lo thiab tshem tawm cov khoom paug rov qab. Lub hauv paus ceramic substrate (99.8% Al₂O₃) muaj lub zog flexural siab (361–1000 MPa), hnav tsis kam, thiab thermal stability txog li 260 ° C (txheej txheem txheej). Lub end effector no zoo tagnrho rau kev tuav cov wafers mos, nyias, lossis nplaum (piv txwv li, tom qab photoresist txheej lossis cov txheej txheem tshuaj lom neeg).