Silicon Carbide (SiC) Raws Li Lub Tshuab Nqus Tsev Chuck rau Qhov Kub Siab & Plasma Ib puag ncig
St.Cera lub SiC-based ceramic chuck yog tsim los ntawm cov silicon carbide uas muaj purity siab (batch S1111, SiC 99.72%, Si dawb 0.05%). Nws muab lub zog flexural ntsuas ntawm 449 MPa, qhov tawg toughness ntawm 3.12 MPa·m¹/², thiab elastic modulus ntawm 457 GPa. Cov khoom siv thermal conductivity (120–150 W/m·K) thiab thermal expansion qis (4.0–4.5 × 10⁻⁶/℃) ua rau kub nce sai thiab tsawg kawg wafer warpage thaum lub sijhawm thermal cycling. Lub chuck tuaj yeem teeb tsa ua lub porous vacuum chuck (gas flow sib xws) lossis lub grooved standard chuck. Nrog rau qhov kub siv siab tshaj plaws ntawm 1600–1700°C (tsis muaj load) thiab kev tiv thaiv plasma erosion zoo heev, lub chuck no zoo tagnrho rau kev ua wafer kub siab (annealing, RTP) thiab cov etch chambers uas alumina chucks lwj.
Cov Lus Qhia Tshwj Xeeb(raws li daim ntawv qhia txog kev xeem SiC S1111 & cov nqi ib txwm muaj):
| Vaj tse | Tus nqi |
| Khoom siv | SiC (99.72% SiC, 0.05% Si Dawb) |
| Qhov Ceev | 3.10–3.15 g/cm³ |
| Kev Nqus Dej | 0% |
| Lub zog flexural | 449 MPa |
| Kev tawg tawv | 3.12 MPa·m¹/² |
| Modulus Elastic | 457 GPa |
| Vickers Hardness | 25–28 GPa |
| Kev Ua Kub | 120–150 W/m·K |
| CTE (25–1000°C) | 4.0–4.5 × 10⁻⁶/℃ |
| Max Siv Kub (tsis muaj load) | 1600–1700°C |
| Kev tiaj tiaj (ntau tshaj 300 hli) | ≤5 μm |
| Qhov Chaw Tiav | Ra ≤0.4 μm (lapped) |
Cov ntawv thov:
● Kev kub hnyiab (annealing, RTP, epitaxial growth)
● Plasma etch chuck nrog kev tiv taus fluorine siab
● Kev tuav cov wafer nyias nyias nrog kev cua sov/txias sib xws
● Lub chuck uas muaj qhov me me rau kev txhawb nqa wafer uas tsis sib cuag
Kev Tsim Khoom:
SiC sintering → kev sib tsoo kom raug ntawm qhov tiaj tiaj thiab qhov profile ntawm qhov chaw → kev tsim cov qauv porous xaiv tau (rau lub tshuab nqus tsev chuck) → lapping → kev ntxuav ultrasonic. Txhua lub chuck raug tshuaj xyuas 100% rau qhov tiaj tiaj (laser interferometer) thiab qhov sib npaug ntawm lub tshuab nqus tsev (kev sim ntws).
Kev Tswj Xyuas Zoo:
● Kev kuaj xyuas qhov ntev ntawm CMM (txoj kab uas hla, tuab, qhov chaw ntawm qhov)
● Kev ntsuas qhov tiaj tiaj raws li ASTM
● Kev kuaj xyuas qhov xau ntawm Helium (rau cov chucks nqus tsev)
● Kev txheeb xyuas lub zog flexural ib pawg (ref. daim ntawv qhia kev xeem)
Qhov zoo dua li Alumina Chucks:
● Kev ua kom muaj cua sov zoo dua (120–150 vs 32 W/m·K rau alumina) – hloov cua sov sai dua 4 npaug
● CTE qis dua (4.0 vs 7.2 × 10⁻⁶/℃) - txo cov kev ntxhov siab thermal ntawm wafer
● Kev tiv thaiv plasma zoo dua - 10 × lub neej ntev dua hauv fluorine etch
● Kub siab tshaj plaws siv (1600°C vs 800°C rau alumina)
Kev Kho Kom Haum:
● Qhov chaw uas muaj qhov los yog qhov grooved
● Txoj kab uas hla 100–450 hli, puag ncig los yog plaub fab
● Lub nplhaib kaw ntug lossis cov chaw faib thaj chaw nqus tsev
● Kev xaiv hlau thaub qab rau kev teeb tsa ruaj khov
Tag nrho cov ntaub ntawv kho tshuab saum toj no los ntawm daim ntawv qhia kev xeem uas tau muab (batch S1111). Cov nqi thermal thiab hardness yog cov yam ntxwv rau qib SiC no. Cov porous SiC chucks xav tau kev ua ntxiv; thov nug txog qhov muaj porosity thiab qhov loj me ntawm qhov pore.
